Thursday, March 30, 2017

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INDUSTRIAL CONTROL HANDBOOK - 3.7 COMPARISON OF POWER SEMICONDUCTORS

As a technician you will find all of the devices that have been previously discussed in a wide variety of electronic circuits. They have been selected for their particular application because of their special properties. These properties are presented in a table in Fig. 3-24 so that you can compare them. From this table you can see that thyristors can control voltages up to 5000 volts, where IGBT, MOS devices, and J-FET devices can handle voltages up to 1000 volts. The maximum current ranges from 10 A for J-FET devices to 5000 A for thyristors. Other information is compared such as turn-off requirements, drive circuit complexity, device protection, and switching losses. The column on the far right side of the table describes the comparison.

Power Semiconductors

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